Shanghai Institute of Microsystems, Inc., etc. made progress in the study of broad spectrum luminescence of silicon nanowire arrays

Shanghai Institute of Microsystems and others made progress in the study of broad spectrum luminescence of silicon nanowire arrays

Recently, the SOI Materials and Devices Research Group of the State Key Laboratory of Functional Materials for Materials of the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences has made new progress in broad spectrum emission of silicon nanowire arrays. The team of researchers combined SOI with surface plasmon technology to study the luminescence properties of silicon nanowire arrays. In cooperation with Fudan University, the FDTD theory was used to calculate the luminescence peaks and nanocavities of silicon nanowires. The corresponding relationship of resonance modes lays an experimental and theoretical foundation for realizing silicon-based photoelectric integration and helps to promote the large-scale application of silicon-based light sources. Relevant research results have been published in Nano Lett., 2017, 17 (3), pp1552-1558 with the topic Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.

As the most important cornerstone in the microelectronics industry, Si has played a crucial role in the development of integrated circuits. However, as the size of the device becomes smaller and smaller, excessive interconnection and integration cause signal delay and device overheating, which brings great development to the continuous development of the microelectronics industry represented by large-scale integrated circuits. Challenges, and silicon-based optoelectronics integration is the ideal way to solve this problem. However, integrating two distinct technologies (electronics and photonics) on the same wafer, the biggest challenge is the problem of light sources. For light-emitting devices, a large amount of research has focused on direct-gap semiconductors such as GaAs and InGaAs. However, there are still huge obstacles to the integration of direct bandgap semiconductor materials such as III-V and silicon. However, due to its indirect bandgap structure, silicon has extremely low luminous efficiency and cannot effectively emit light. Researchers at the SOI group such as Ma Zhiqiang, Di Zengfeng, and Wang Xie combined SOI technology with surface plasmon polariton technology to fabricate silicon nanowires into a trapezoidal structure to realize trapezoidal nanocavity resonator-enhanced silicon. The nanowire array has enhanced luminescence. Through comparison experiments and FDTD calculation results, one-to-one correspondence between the peak position of the nanowire array and the resonant mode of the nanocavity was found. Through the preparation of a silicon nanowire array with a graded gradient, the luminescence peak position of the silicon nanowire array is continuously adjustable in the visible and near-infrared regions. This not only opens a new way for silicon-based light sources, but also will strongly promote the development of silicon-based optoelectronic integration.

This work was supported by related research projects such as the National Natural Science Foundation of China's Innovative Research Group, the Excellent Youth Fund, and the High-mobility Materials Innovation Research Team of the Chinese Academy of Sciences.

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